Business
- SiC Epitaxy for Power Semiconductor
(Electric Vehicles, Renewable Energy Systems, AI data centers)
- Dual Horizontal Reactor with Single Wafer Loading
- 6/8inch Compatibility by Susceptor Replacement
- Hot Wall Reactor
: High Gas Efficiency & Low Power Consumption
- Tunable Triple Pair Nozzle
: Optimizes Epilayer Uniformity
- Wafer Temp. Control by Pyrometer
- Consistent Uniformity
Doping(≤2%) & Thickness(≤1~2%)
: Tunable Triple Pair Nozzle
: Temp Uniformity(≤4℃@1650℃, 8inch)
- High Productivity
: High Growth Rate (>60um/hr)
- User Convenience
: Easy PM (Top Lid Open Structure)
: Fully Automated Loading / Unloading
- oesales@hites.co.kr
- AlN, AlGaN Growth
- Far UV, UVC, UVB and UVA LED (220~350nm)
- Power Device (AlN, High Al-content AlGaN and ScAlN)
- Photodetector (AlGaN-based)
- Horizontal Reactor (2/4/6inch)
- Induction Heater (Up to 1400℃)
- Plate Type Triple Nozzle
- Auto Loading System
- High Quality AlN
: Fast Gas Switchable Reactor
- Compatible for all Al Composition (GaN ~ AlN)
: High Growth Rate & Low Impurity Level
- Reproducibility
: Wafer Temp. Control by Pyrometer
- High Durability
: Induction Heater, Hot ceiling, Clog-free Nozzle
- User Convenience
: Easy Maintenance (Long PM interval & Short PM time)
- oesales@hites.co.kr
- Micro LED (Blue & Green)
- Horizontal Reactor with Single Wafer Loading (6/8inch)
- TES-designed Susceptor with Pancake Induction Coil
- Tunable Triple Pair Nozzle
: Uniform Wavelength
- In-situ Cleaning System
: Low particle
Auto Loading System
- 6inch : Q4, 2026
- 8inch : Q4, 2027
- GaN on Si Power Devices
※ Other substrates available (Sapphire, GaN, SiC etc)
- Horizontal Reactor with Single Wafer Loading (12inch)
※ Other Features will be determined later
- Q2, 2028
- oesales@hites.co.kr
